Simulation of charge sharing effects in 70 μm pixelated CdTe sensor

Pixel detectors become an integral part of medical imaging, nondestructive testing, space science and particle physics. Sensors that are bump bonded to readout ASICs made from various materials such as GaAs, Si, CdTe, CdZnTe. Current research tends use CdTe/CdZnTe gamma-ray sensors due its high absorption coefficient in the gamma spectrum. With decreasing size pixel pitch, charge diffusion secondary fluorescent photons cause sharing between neighboring pixels. That decreases spatial spectral resolution detector. This study simulated effects a 2 mm thick 70 μm pixelated CdTe using TCAD. We created 3D model sensor with array 5 × propagation e-h pairs generated upon CdTe. Based on simulation outcome, we calculated collection time, drift time capacitance. Finally, propose for analog front-end design.